Semiconductor
Q-PAD
 |
| Application |
|---|
| Thickness : 0.152mm ~ 0.38mm(Customizing) |
| Temperature : -60 ~ 180 ℃ |
| Thermal conductivity : 2.5W/Mk |
| Characteristics : Polymer double-sided coating |
| Purpose of Use : Maintain electrical properties and thermal conductivity Prevent Scratch and arcing |
GEL-PAD
 |
| Application |
|---|
| Thickness : 0.15 to 1mm |
| Temperature : -60 ~ 180 ℃ |
| Thermal conductivity : 1~5W/Mk |
| Purpose of use : Wafer edge yield improvement and arcing prevention |
Sil-PAD
 |
| Application |
|---|
| Thickness : 0.15mm |
| Temperature : -20 ~ 150 ℃ |
| Characteristics : Excellent dielectric strength and thermal conductivity |
| Purpose of use : Excellent electrical insulation and minimized particle generation Applied to sensitive processes of Particle & Silicone |
Polymide
 |
| Application |
|---|
| Thickness : 0.075mm/0.125mm |
| Temperature : ~400 ℃ |
| Characteristics : Chemical resistance . Abrasion resistance, Excellent heat resistance, strong against plasma and low coefficient of thermal expansion |
| Purpose of use : Used to prevent arcing by high temperature and high voltage |
Cirlex
 |
| Application |
|---|
| Thickness : 0.78mm |
| Temperature : ~351 ℃ |
| Characteristics : Chemical resistance . Abrasion resistance, Excellent heat resistance , strong against plasma and low coefficient of thermal expansion |
| Purpose of use : Strong aginst High Power Plasma, Shielding from electromagnetic |
Graphite
 |
| Application |
|---|
| Thickness : 0.381mm |
| Temperature : ~450 ℃ |
| Characteristics : Low coefficient of thermal expansion, High thermal conductivity & thermal shock resistance & electrical conductivity / chemical resistance |
| Purpose of use : Suitable for high thermal conductivity and thermal impact resistance at high temperatures by using T.C.P Gasket |
